Electron beam induced current characterization of dark line defects in failed and degraded high power quantum well laser diodes

M. Mason, N. Presser, Y. Sin, B. Foran, S. Moss
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Abstract

We investigate the dependence of electron beam induced current (EBIC) contrast from dark-line defects (DLDs) on temperature and voltage bias in failed and degraded high power quantum well laser diodes (HPLDs). Voltage bias induced contrast variations in EBIC allowed us to make the first observation of what may be the DLD initiation point in a degraded, but not failed, HPLD. Wavelet analysis of temperature and voltage dependent EBIC contrast reveals three distinct regions with different defect properties within the DLD. These results can be correlated to destructive physical analysis and other defect characterization techniques, such as cathodoluminescence and deep-level transient spectroscopy, to provide insight into defect types and failure mechanisms in these devices.
失效和退化高功率量子阱激光二极管中暗线缺陷的电子束感应电流表征
我们研究了失效和退化的高功率量子阱激光二极管(HPLDs)中,来自黑线缺陷(dld)的电子束感应电流(EBIC)对比度对温度和电压偏置的依赖。电压偏置引起的EBIC对比度变化使我们能够首次观察到降级但未失效的HPLD中DLD的起始点。温度和电压相关的EBIC对比度的小波分析揭示了DLD内具有不同缺陷性质的三个不同区域。这些结果可以与破坏性物理分析和其他缺陷表征技术(如阴极发光和深能级瞬态光谱)相关联,以深入了解这些器件中的缺陷类型和失效机制。
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