The hot-carrier degradation mechanism of p-DDDMOS transistor with different p-drift dosage

Siyang Liu, Weifeng Sun, Weijun Wan, Qinsong Qian, Hu Sun
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引用次数: 3

Abstract

Hot-carrier-induced degradation in the p-type double diffusion drain MOS (p-DDDMOS) transistor with different p-drift dosage is investigated. Basing on the experimental data and T-CAD simulations, hot-electron injection into the oxide of the p-drift region near the channel has been found, leading to the on-resistance (Ron) decrease, however, no hot-carrier degradation is observed in the channel region. The experimental results also show that higher p-drift dosage will result in much more serious degradation due to much more hot electron injection and trapping.
不同p漂量下p-DDDMOS晶体管的热载流子降解机理
研究了不同p漂移剂量下p型双扩散漏极MOS (p-DDDMOS)晶体管的热载子诱导降解。根据实验数据和T-CAD模拟,在通道附近的p漂移区发现了热电子注入氧化物,导致导通电阻(Ron)降低,但在通道区域未观察到热载子退化。实验结果还表明,较高的p漂剂量会导致更多的热电子注入和捕获,从而导致更严重的降解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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