Electrical Treeing Breakdown Voltage of Epoxy/Hollow-silica Nanocomposites

2021 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP) Pub Date : 2021-12-12 DOI:10.1109/CEIDP50766.2021.9705414

Mirai Shimura, M. Kurimoto, S. Sugimoto, T. Kato, Kazuma Tagawa, Y. Suzuoki

{"title":"Electrical Treeing Breakdown Voltage of Epoxy/Hollow-silica Nanocomposites","authors":"Mirai Shimura, M. Kurimoto, S. Sugimoto, T. Kato, Kazuma Tagawa, Y. Suzuoki","doi":"10.1109/CEIDP50766.2021.9705414","DOIUrl":null,"url":null,"abstract":"The relative permittivity of epoxy nanocomposites (NCs) containing hollow silica nanoparticles (epoxy/hollow-silica NC) is lower than that of the unfilled epoxy resin. The low permittivity in hollow silica nanoparticles is caused by the nanometric pores present in them; however, the effect of nanometric pores on the dielectric breakdown strength is unclear. In this study, we investigated the electrical treeing breakdown voltage (BDV) of epoxy/hollow-silica NC and compared it with that of the unfilled epoxy resin and epoxy nanocomposites containing solid silica nanoparticles (epoxy/solid-silica NC). The average size and the particle porosity of the hollow silica nanoparticles were approximately 100 nm and 48 vol%, respectively. The filler volume fraction of the silica nanoparticles in the NCs was 5 wt %. The breakdown test was performed using a needle-plate electrode with a gap of 3 mm. The average BDV of the epoxy/hollow-silica NC was almost the same as that of the unfilled epoxy resin and epoxy/solid-silica NC. These results suggest that the nanometric pores in the epoxy/ hollow-silica NC did not behave as defects to reduce the treeing BDV.","PeriodicalId":6837,"journal":{"name":"2021 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP)","volume":"40 1","pages":"490-493"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CEIDP50766.2021.9705414","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

Abstract

The relative permittivity of epoxy nanocomposites (NCs) containing hollow silica nanoparticles (epoxy/hollow-silica NC) is lower than that of the unfilled epoxy resin. The low permittivity in hollow silica nanoparticles is caused by the nanometric pores present in them; however, the effect of nanometric pores on the dielectric breakdown strength is unclear. In this study, we investigated the electrical treeing breakdown voltage (BDV) of epoxy/hollow-silica NC and compared it with that of the unfilled epoxy resin and epoxy nanocomposites containing solid silica nanoparticles (epoxy/solid-silica NC). The average size and the particle porosity of the hollow silica nanoparticles were approximately 100 nm and 48 vol%, respectively. The filler volume fraction of the silica nanoparticles in the NCs was 5 wt %. The breakdown test was performed using a needle-plate electrode with a gap of 3 mm. The average BDV of the epoxy/hollow-silica NC was almost the same as that of the unfilled epoxy resin and epoxy/solid-silica NC. These results suggest that the nanometric pores in the epoxy/ hollow-silica NC did not behave as defects to reduce the treeing BDV.

查看原文本刊更多论文

环氧树脂/空心二氧化硅纳米复合材料的树状击穿电压

含有空心二氧化硅纳米颗粒的环氧纳米复合材料(环氧/空心二氧化硅纳米复合材料)的相对介电常数低于未填充的环氧树脂。空心二氧化硅纳米颗粒的低介电常数是由其内部存在纳米孔引起的;然而，纳米孔对介质击穿强度的影响尚不清楚。本文研究了环氧树脂/空心二氧化硅纳米复合材料的树击穿电压(BDV)，并与未填充的环氧树脂和含有固体二氧化硅纳米颗粒的环氧纳米复合材料(环氧/固体二氧化硅纳米复合材料)进行了比较。中空二氧化硅纳米颗粒的平均尺寸和孔隙率分别约为100 nm和48 vol%。纳米二氧化硅纳米颗粒的填充体积分数为5 wt %。击穿试验采用间隙为3mm的针板电极进行。环氧树脂/空心二氧化硅数控的平均BDV与未填充的环氧树脂和环氧树脂/固体二氧化硅数控的平均BDV几乎相同。这些结果表明，环氧树脂/空心二氧化硅数控材料中的纳米孔不会成为降低树形BDV的缺陷。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2021 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP)

自引率

0.00%

发文量