Рекордно толстые эпитаксиальные слои kappa(ε)-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-, выращенные на GaN/c-сапфире

Abstract

Record thick (up to 100 μm) epitaxial layers of a prospective semiconductor metastable Ga2O3 were grown by HVPE (Halide Vapor Phase Epitaxy) on GaN buffer layers on c-sapphire substrate. The X-ray diffraction spectra of the layers show that the structure of the layer is a pure k(ε)-Ga2O3 without any other phases. At the same time, the organization of the domain structure is noted, which manifests itself in the form of pseudohexagonal prisms with the inheritance of the orientation of the gallium nitride sublayer. Schottky diodes with a nickel contact were fabricated and the electrical and photoelectric properties of the layers were studied. Capacitance-voltage (C-V) and frequency-capacitance (C-f) dependencies have been studied, photocurrent and photocapacitance spectra have been measured.