Ag Ionic Memory Cell Technology for Terabit-Scale High-Density Application

Abstract

We demonstrated a cross-point memory array composed of 40nm Ag ionic memory cell with $\text{sub}-\mu \text{A}$ and selectorless operation and 10-year data retention, making it a promising candidate for terabit-scale high-density memory application. Discontinuous conductive path with large and dense Ag clusters enabled 10-year retention even at sub-μA current with keeping high non-linearity in I-V. We implemented, for the first time, the improved cell into a 40nm cross-point array and demonstrated narrow read distribution which satisfies requirements for reliable array operation.