W-band InP Gunn diodes with optimized linearly graded profiles

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147353

H. Kurita, A. Yokohata, A. Kodama, K. Suga, S. Kato, M. Ohmori

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Abstract

The I-V characteristics and RF performances of W-band InP Gunn diodes with linearly graded doping profiles are presented. Measurements performed on a fabricated diode indicate all output power of 135 mW with 3.0% efficiency at 90 GHz and output power of 117 mW with 2.7% at 94 GHz. The efficiencies are about 1.5 times larger than the best efficiency obtained for flat diodes.<>

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具有优化线性渐变轮廓的w波段InP - Gunn二极管

研究了掺杂线性梯度分布的w波段InP - Gunn二极管的I-V特性和射频性能。对自制二极管进行的测量表明，在90 GHz时，所有输出功率为135 mW，效率为3.0%;在94 GHz时，输出功率为117 mW，效率为2.7%。其效率大约是平面二极管最佳效率的1.5倍

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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