Effects of aluminum layer and oxidation on TiO2 based bipolar resistive random access memory (RRAM)

Abstract

The effects of Al layer and plasma oxidation amount on TiO2 based bipolar RRAM cell are investigated, respectively. In Ir/Al/TiO2/Ir structure, VRESET is slightly lowered and the current ratio is increased. In case of plasma oxidation effect, the device which experienced short-time plasma oxidation has low set/reset voltages and high current and resistance ratios. These results are commonly thought to be induced by more oxygen vacancies.