Electronic structure study of ac modified passive film on stainless steel

T. Du
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引用次数: 11

Abstract

Abstract The semiconductor properties, electronic structure and reduction susceptibility of passive films on AISI type 304 stainless steel in dilute sulphuric acid solutions have been studied by electrochemical impedance spectroscopy measurements, Mott-Schottky analysis and the photoelectrochemical technique. The passive film shows features of an amorphous or highly disordered n type semiconductor. The donor level is in the range of 1026-1027 m-3 and increases with the amplitude of ac potential. The passive film thickness increases linearly with the amplitude of the applied ac potential. The reduction susceptibility of the passive film is also decreased with the amplitude of the applied ac. The photoelectrochemical measurements also indicate that the passive film is n type semiconductor and the photcurrent is decreased after ac modulation. It might be related to the surface chromium accumulation.
不锈钢交流改性钝化膜的电子结构研究
采用电化学阻抗谱、Mott-Schottky分析和光电化学技术研究了AISI 304不锈钢钝化膜在稀硫酸溶液中的半导体性能、电子结构和还原敏感性。钝化膜表现出非晶态或高度无序的n型半导体的特征。供体电平在1026 ~ 1027 m-3范围内,随交流电位幅值的增大而增大。无源膜厚度随外加交流电位的幅值线性增加。钝化膜的还原率随外加交流幅度的增大而减小。光电化学测量也表明,钝化膜为n型半导体,经过交流调制后光电流减小。这可能与表面铬的积累有关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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