High power S-band GaN-based power amplifier for radar systems

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI:10.1109/IMWS-AMP.2015.7324922

Yuting Yang, Mi Zhang, W. Che, Haidong Chen, Qi Cai

引用次数: 0

Abstract

One S-band high-power GaN-based power amplifier (PA) is investigated. The design of the multi-stage PA and the biasing circuit are investigated seperately, including the two stages of power amplifiers which delivers about 50dBm of saturated output power in class AB from 2.7 to 2.9 GHz and the bias control channel which provides special bias and power sequencing for GaN HEMTs. Overall circuits operating at S band are designed, fabricated and measured.

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雷达系统高功率s波段氮化镓功率放大器

研究了一种基于氮化镓的s波段大功率功率放大器。分别研究了多级放大器和偏置电路的设计，包括两级功率放大器，在2.7 ~ 2.9 GHz范围内提供约50dBm的AB类饱和输出功率，以及为GaN hemt提供特殊偏置和功率排序的偏置控制通道。设计、制作和测量了S波段工作的总体电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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