Si-Zhao Huang , Qing-Yi Feng , Bi-Yi Wang , Hong-Dong Yang , Bo Li , Xia Xiang , Xiao-Tao Zu , Hong-Xiang Deng
{"title":"Prediction of a high-ZT and strong anisotropic thermoelectric material: Monolayer InClSe","authors":"Si-Zhao Huang , Qing-Yi Feng , Bi-Yi Wang , Hong-Dong Yang , Bo Li , Xia Xiang , Xiao-Tao Zu , Hong-Xiang Deng","doi":"10.1016/j.physe.2021.115108","DOIUrl":null,"url":null,"abstract":"<div><p><span>In this work, thermoelectric<span><span><span> (TE) properties of monolayer InClSe are investigated by using the first-principles calculations combined with Boltzmann transport theory, which is a novel member of FeOCl-type 2D materials<span>. We find that the electronic and thermal transport parameters along x and y axis are quite different, resulting in a strong anisotropic thermoelectric performance of monolayer InClSe, which provides a possibility to design anisotropic thermoelectric device. For n-type doping, monolayer InClSe has high electrical conductivity along x-axis. Detailed calculations reveal that the high electrical conductivity is originate from the long electron relaxation time and high connectivity of </span></span>electron conduction channels. The high electrical conductivity and satisfactory </span>Seebeck coefficient result in the excellent power factor (</span></span><em>PF</em>) for monolayer InClSe<em>.</em> For n-type doping, the optimal <em>PF</em> along x-axis can reach 47.8 mW m<sup>−1</sup> K<sup>−2</sup><span> at 700 K, which is much higher than most typical thermoelectric materials. Combining excellent </span><em>PF</em><span> and suppressed lattice thermal conductivity, the n-type doping monolayer InClSe has high </span><em>ZT</em> values in wide temperature range (300 K–700 K) along x-axis and the maximal <em>ZT</em><span> value reaches 2.82 at 700 K. Our results demonstrate that monolayer InClSe is a promising thermoelectric candidate for energy harvesting in moderate-temperature range.</span></p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"138 ","pages":"Article 115108"},"PeriodicalIF":2.9000,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica E-low-dimensional Systems & Nanostructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1386947721004586","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
引用次数: 3
Abstract
In this work, thermoelectric (TE) properties of monolayer InClSe are investigated by using the first-principles calculations combined with Boltzmann transport theory, which is a novel member of FeOCl-type 2D materials. We find that the electronic and thermal transport parameters along x and y axis are quite different, resulting in a strong anisotropic thermoelectric performance of monolayer InClSe, which provides a possibility to design anisotropic thermoelectric device. For n-type doping, monolayer InClSe has high electrical conductivity along x-axis. Detailed calculations reveal that the high electrical conductivity is originate from the long electron relaxation time and high connectivity of electron conduction channels. The high electrical conductivity and satisfactory Seebeck coefficient result in the excellent power factor (PF) for monolayer InClSe. For n-type doping, the optimal PF along x-axis can reach 47.8 mW m−1 K−2 at 700 K, which is much higher than most typical thermoelectric materials. Combining excellent PF and suppressed lattice thermal conductivity, the n-type doping monolayer InClSe has high ZT values in wide temperature range (300 K–700 K) along x-axis and the maximal ZT value reaches 2.82 at 700 K. Our results demonstrate that monolayer InClSe is a promising thermoelectric candidate for energy harvesting in moderate-temperature range.
期刊介绍:
Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals.
Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena.
Keywords:
• topological insulators/superconductors, majorana fermions, Wyel semimetals;
• quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems;
• layered superconductivity, low dimensional systems with superconducting proximity effect;
• 2D materials such as transition metal dichalcogenides;
• oxide heterostructures including ZnO, SrTiO3 etc;
• carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.)
• quantum wells and superlattices;
• quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect;
• optical- and phonons-related phenomena;
• magnetic-semiconductor structures;
• charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling;
• ultra-fast nonlinear optical phenomena;
• novel devices and applications (such as high performance sensor, solar cell, etc);
• novel growth and fabrication techniques for nanostructures