Liquid and Solid Precursor Delivery Systems in Gas Phase Processes

C. Vahlas, B. Caussat, W. Gladfelter, F. Senocq, Elizabeth J. Gladfelter
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引用次数: 12

Abstract

Due to attractive surface properties and to intrinsic brittleness of Complex Metallic Alloys (CMAs), most of their potential applications involve materials with high surface-to-volume ratios, including thin films and coatings. While physical vapor deposition techniques are efficient for the processing of CMA films on line-of-sight surfaces, chemical vapor deposition (CVD) is well positioned for their application on complex surfaces. However, for CVD process to be implemented efficiently in the processing of CMA films a number of challenges must be addressed. Because numerous CVD reagents, commonly called precursors, are low vapor pressure liquids or solids, one of these challenges is the production of vapors of such precursors, which are decomposed in the deposition chamber to provide the desired film. Such a production has to be ensured at high rate and must be reproducible and stable during the whole process. Actual solutions to this question involve (i) bubbling inert gas through thermally regulated liquid precursors, (ii) leaching the surface of fixed precursor powder beds, and (iii) in situ generating the precursor flow by passing a reactive gas through a thermally regulated bed of the metallic element to be transported. Such solutions neither may be satisfactory for actual R&D needs nor may be transferable to industrial environments. These reasons are in part responsible for the limited implementation of advanced materials (including CMA-based ones) in numerous industrial and hence societal needs. More recently, innovative solutions have been proposed to feed deposition systems based on vapor phase chemical techniques (CVD and Atomic Layer Deposition, ALD). Such solutions are Direct Liquid Injection (DLI) of dissolved solid precursors and also sublimation of the latter in fluidized beds or in elaborated fixed beds. Such technological responses show promise for industrial applications of CVD, especially for the deposition of metals and ceramic compounds for which the available molecular and inorganic precursors present low vapor pressures. This review provides an overview of the methods by which precursor vapors are transported to the deposition chamber. Early and recent patents dedicated to such technologies will be revisited and considered in the light of the deposition of multimetallic alloy coatings.
气相过程中的液体和固体前驱体输送系统
由于复杂金属合金(CMAs)具有吸引人的表面特性和固有的脆性,它们的大多数潜在应用涉及具有高表面体积比的材料,包括薄膜和涂层。虽然物理气相沉积技术对于在视线表面上加工CMA薄膜是有效的,但化学气相沉积(CVD)在复杂表面上的应用是很好的。然而,为了使CVD工艺有效地应用于CMA薄膜的加工,必须解决许多挑战。由于许多CVD试剂(通常称为前驱体)是低蒸汽压液体或固体,因此这些挑战之一是产生这些前驱体的蒸汽,这些前驱体在沉积室中分解以提供所需的薄膜。这样的生产必须保证高速率,并且在整个过程中必须是可复制的和稳定的。这个问题的实际解决方案包括:(i)通过热调节的液体前驱体鼓泡惰性气体,(ii)浸出固定前驱体粉末床的表面,以及(iii)通过反应气体通过待输送金属元素的热调节床,在现场产生前驱体流。这样的解决方案既不能满足实际的研发需求,也不能转移到工业环境中。这些原因在一定程度上导致了先进材料(包括基于cma的材料)在众多工业和社会需求中的有限实施。最近,基于气相化学技术(CVD和原子层沉积,ALD)的进料沉积系统提出了创新的解决方案。这些溶液是溶解的固体前体的直接液体注射(DLI),以及后者在流化床或精心制作的固定床中的升华。这种技术反应显示了CVD的工业应用前景,特别是对于金属和陶瓷化合物的沉积,可用的分子和无机前体呈现低蒸汽压。这篇综述概述了前体蒸汽被输送到沉积室的方法。早期和最近的专利致力于这些技术将被重新审视,并考虑到多金属合金涂层的沉积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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