Effects of Magnetic Field on Surface Flashover of Polyimide Film for Superconducting Magnet Insulation

B. Du, Y. Li, M.Y. Wang, Z.X. Liu, X.T. Han, Y. Zhang, Jin Li, Z.L. Li, H.L. Sun
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引用次数: 2

Abstract

Polyimide (PI) film is widely used as insulation material in superconducting magnet systems. While operating, the PI film is subjected to the interaction of electric and magnetic fields. The existence of magnetic field will affect charge behaviors leading to the changes in flashover voltage. In this paper, a steady magnetic field up to 1.2 T was applied to the PI films. The flashover voltages were investigated under DC condition and AC condition. Different angles between magnetic and electric fields were set to explore the influence of magnetic field direction on the flashover voltage of PI film. Experimental results show that the $E\times B$ drifting into the surface will block the secondary electron emission, resulting in an increase in the flashover voltage. When the $E\times B$ drifts out of the surface the result is just the opposite. The promoting effect of magnetic field on the changes of flashover voltage is weakened under the AC condition, while the suppressive effect is strengthened. The failure mechanism of PI film under strong magnetic field will provide a theoretical basis for improving the insulation reliability of superconducting magnets.
磁场对超导磁体绝缘聚酰亚胺膜表面闪络的影响
聚酰亚胺(PI)薄膜是一种广泛应用于超导磁体系统的绝缘材料。在工作时,PI薄膜受到电场和磁场的相互作用。磁场的存在会影响电荷行为,导致闪络电压的变化。本文在PI薄膜上施加了高达1.2 T的稳定磁场。研究了直流和交流条件下的闪络电压。设置不同的磁场与电场夹角,探讨磁场方向对PI薄膜闪络电压的影响。实验结果表明,漂移到表面的$E\乘以$ B$会阻挡二次电子发射,导致闪络电压升高。当E\乘以B$漂出表面时,结果正好相反。交流条件下,磁场对闪络电压变化的促进作用减弱,抑制作用增强。研究PI膜在强磁场作用下的失效机理,将为提高超导磁体的绝缘可靠性提供理论依据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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