Influence of X-ray Irradiation on Optical Parameters of (Ga0.2 In0.8)2 Se3 Films

I. Studenyak, M. Kranjčec, M. Pop, A. Solomon, L. Suslikov
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Abstract

$\left(G a_{0.2} \operatorname{In}_{0.8}\right)_{2} \mathrm{Se}_{3}$ films were deposited by the thermal evaporation technique. As-deposited thin films were irradiated using wideband radiation of Cu-anode X-ray tube at different exposition times. The spectral dependences of refractive index and extinction coefficient were measured by the spectral ellipsometry technique. The optical transmission spectra of X-ray irradiated $\left(G a_{0.2} \operatorname{In}_{0.8}\right)_{2} \mathrm{Se}_{3}$ films were studied depending on irradiation time. Parameters of Urbach absorption edge for X-ray irradiated $\left(G a_{0.2} \operatorname{In}_{0.8}\right)_{2} \mathrm{Se}_{3}$ films were determined. The nonlinear decrease of energy pseudogap as well as nonlinear increase of Urbach energy and refractive index with increase of X-ray irradiation time are revealed. The spectral dependences of refractive indices of non-irradiated and X-ray irradiated $\left(G a_{0.2} \operatorname{In}_{0.8}\right)_{2} \mathrm{Se}_{3}$ films are described by different dispersion relations.
x射线辐照对(Ga0.2 In0.8) 2se3薄膜光学参数的影响
$\left(ga_ {0.2} \operatorname{In}_{0.8}\right)_{2} \mathrm{Se}_{3}$薄膜采用热蒸发技术沉积。利用cu阳极x射线管在不同曝光时间对砷沉积薄膜进行宽带辐射辐照。利用光谱椭偏技术测量了折射率和消光系数的光谱依赖性。研究了x射线辐照$\左(ga_ {0.2} \operatorname{In}{0.8}\右)_{2}\mathrm{Se}{3}$薄膜随辐照时间的变化。测定了x射线辐照$\左(ga_ {0.2} \operatorname{In}_{0.8}\右)_{2}\mathrm{Se}_{3}$薄膜的乌尔巴赫吸收边参数。揭示了随x射线辐照时间的增加,能量赝隙的非线性减小以及厄巴赫能量和折射率的非线性增加。用不同的色散关系描述了未辐照和x射线辐照$\左(ga_ {0.2} \operatorname{In}{0.8}\右)_{2}\ maththrm {Se}{3}$薄膜折射率的光谱依赖性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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