A study on the removal of silicon native oxide for ULSI devices

Abstract

In UV-excited F/sub 2/+H/sub 2/ dry cleaning, the etching mechanism and selective etching of silicon native oxide were investigated using PSG, BSG, TEOS and thermal oxide film on silicon wafers. Also, the removal of silicon native oxide in contact holes after UV-excited F/sub 2/+H/sub 2/ dry cleaning, was defined by confirming the reduction of Kelvin resistance.