A Physics Based Model for DC Self-Heating in Nanowire-FET Considering Lattice Temperature

Manoj Kumar, A. Bansal, K. Aditya, Charu Gupta, Anshul Gupta, A. Dixit
{"title":"A Physics Based Model for DC Self-Heating in Nanowire-FET Considering Lattice Temperature","authors":"Manoj Kumar, A. Bansal, K. Aditya, Charu Gupta, Anshul Gupta, A. Dixit","doi":"10.1109/icee44586.2018.8937983","DOIUrl":null,"url":null,"abstract":"In this paper, a unified physics based 2-D analytical model for DC self-heating in Nanowire-FET is presented for the first time. The carrier and lattice-temperatures are considered in the model to include the effect of self-heating in Nanowire-FET. The model uses superposition approach to solve 2-D Poisson’s equation capturing the electrostatic potential of the device while the energy balance equation and temperature dependent mobility equation captures the effect of increased lattice temperature. By obtaining a good agreement with calibrated 3-D Sentaurus-TCAD electro-thermal simulations, the accuracy of the developed model is validated.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icee44586.2018.8937983","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper, a unified physics based 2-D analytical model for DC self-heating in Nanowire-FET is presented for the first time. The carrier and lattice-temperatures are considered in the model to include the effect of self-heating in Nanowire-FET. The model uses superposition approach to solve 2-D Poisson’s equation capturing the electrostatic potential of the device while the energy balance equation and temperature dependent mobility equation captures the effect of increased lattice temperature. By obtaining a good agreement with calibrated 3-D Sentaurus-TCAD electro-thermal simulations, the accuracy of the developed model is validated.
考虑晶格温度的纳米线场效应管直流自热物理模型
本文首次建立了基于统一物理的纳米线场效应管直流自热的二维解析模型。模型中考虑了载流子温度和晶格温度,考虑了纳米线场效应管的自热效应。该模型采用叠加法求解捕获器件静电势的二维泊松方程,而能量平衡方程和温度相关迁移率方程捕获晶格温度升高的影响。通过与经标定的三维Sentaurus-TCAD电热仿真结果的比较,验证了所建模型的准确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信