A 30.1μm2, < ±1.1°C-3σ-error, 0.4-to-1.0V temperature sensor based on direct threshold-voltage sensing for on-chip dense thermal monitoring

Seongjong Kim, Mingoo Seok
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引用次数: 11

Abstract

This paper presents on-chip temperature sensor circuits for dense thermal monitoring in digital VLSI systems. The sensor directly captures the temperature dependency of threshold voltage. The prototype in a 65nm demonstrates that as compared to the state of the arts it can achieve a 9× smaller footprint of 30.1μm2 and a 3× smaller 3σ-error of <;±1.1°C after one temperature point calibration. The proposed sensor also achieves a 0.2V better voltage scalability than the previous best voltage-scalable design.
一个30.1μm2, <±1.1°c -3σ-误差,0.4 ~ 1.0 v的基于直接阈值电压传感的温度传感器,用于片上密集热监测
本文介绍了用于数字VLSI系统密集热监测的片上温度传感器电路。传感器直接捕获阈值电压的温度依赖性。在65nm尺度下的原型表明,与目前的技术水平相比,在一个温度点校准后,它可以实现9倍的30.1μm2的占地面积和3倍的<±1.1°C的3σ误差。该传感器的电压可扩展性也比之前的最佳电压可扩展性设计提高了0.2V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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