Anomalous DLTS signals due to small fluctuations in the reverse bias voltage on a Si diode

Abstract

A high background capacitance transient signal during DLTS measurement is reported and found to be an instrumental effect due to small fluctuations in the reverse bias on the diode under test. The authors confirm its observed behaviour from a consideration of small reverse bias fluctuations on the measured diode capacitance transient. They conclude that it is not related to deep trap centres.