The chemical vapor deposition of bulk polycrystalline silicon carbide

Abstract

The development of a process for chemical vapor deposition of polycrystalline α-phase silicon carbide onto carbon substrates is described. This process is based on the use of dichlorosilane and methane as reactants in nitrogen at atmospheric pressure. Deposits of fine-grained and hard material up to 12 mm thick have been obtained. The deposits are nonporous, relatively free of stress, free of cracks over large areas, and suitable for some structural applications