High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures

Abstract

The characteristics of high-power semiconductor lasers with an 800 μm emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures with three optically uncoupled laser sections are studied. The maximum power achieved under pumping by current pulses with an amplitude of 47 A and a duration of 1 μs is 110 W with the maximum active region heating not exceeding 4.7 °C. At a pulse duration of 860 μs, the maximum optical power is 22.6 W, and the decrease in the optical power to the pulse end reaches 6.7 %. A decrease in the laser pulse duration to 85 μs leads to an increase in the peak laser power to 41.4 W at a pump current amplitude of 20 A.