{"title":"A 6-bit 1 GHz acquisition speed CMOS flash ADC with digital error correction","authors":"K. Uyttenhove, A. Marques, M. Steyaert","doi":"10.1109/CICC.2000.852659","DOIUrl":null,"url":null,"abstract":"In this paper, a 6-bit CMOS analog-to-digital converter (A/D) with a maximum acquisition speed of 1 GHz is presented. The problem of meta-stability has got special attention in this design, since this problem degrades the Spurious-Free Dynamic Range (SFDR) at high sampling frequencies. Measured SNDR (signal to noise plus distortion) is over 30 dB at 500 MHz clock and f/sub IN/=141 kHz. The measured SFDR for input frequencies up to 250 MHz is over 30 dB. The chip has been processed in a standard 0.35 /spl mu/m CMOS technology with double poly and occupies an active area of 0.8 mm/sup 2/.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"54","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2000.852659","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 54
Abstract
In this paper, a 6-bit CMOS analog-to-digital converter (A/D) with a maximum acquisition speed of 1 GHz is presented. The problem of meta-stability has got special attention in this design, since this problem degrades the Spurious-Free Dynamic Range (SFDR) at high sampling frequencies. Measured SNDR (signal to noise plus distortion) is over 30 dB at 500 MHz clock and f/sub IN/=141 kHz. The measured SFDR for input frequencies up to 250 MHz is over 30 dB. The chip has been processed in a standard 0.35 /spl mu/m CMOS technology with double poly and occupies an active area of 0.8 mm/sup 2/.