Novel infrared detectors based on semiconductor quantum dots

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004. Pub Date : 2004-01-01 DOI:10.1109/ICIMW.2004.1422042

Zhonghui Chen, Eui-Tae Kim, Zhengmao Ye, J. Campbell, A. Madhukar

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Abstract

This paper reviews recent progresses in developing self-assembled InAs/GaAs quantum dots based infrared photodetectors, especially, with n-i(QDs)-n configuration. These significant progresses indicate a realistic hope that QDIPs can be exploited for mid-infrared imaging application.

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基于半导体量子点的新型红外探测器

本文综述了近年来基于自组装InAs/GaAs量子点的红外探测器的研究进展，特别是n-i(QDs)-n结构红外探测器的研究进展。这些重大进展预示着qdip在中红外成像领域的应用有望实现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.

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