AC analysis of thin gate oxide MOS with quantum mechanical corrections

Abstract

MOS device scaling into the deep submicron regime inevitably relies on thinner gate oxide and higher substrate doping. Quantum mechanical effects must be considered in device design. This paper presents a density-gradient model which expresses the quantum mechanical effects using macroscopic approximation, and AC analysis based on it. 1D and 2D computer simulations of AC analysis show QM effects on threshold voltage and current with different gate oxide thickness and substrate doping. A simple technique to extract device parameters for circuit design is also presented.