Фазовый состав, кристаллическая структура, диэлектрические и сегнетоэлектрические свойства тонких пленок Ba-=SUB=-2-=/SUB=-NdFeNb-=SUB=-4-=/SUB=-O-=SUB=-15-=/SUB=-, выращенных на подложке Si(001) в атмосфере кислорода

Физика твердого тела Pub Date : 2023-01-01 DOI:10.21883/ftt.2023.04.55295.13

Анна Владимировна Павленко, Татьяна Сергеевна Ильина, Д. А. Киселев, Д.В. Стрюков

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Abstract

The phase composition, nanostructure, and properties of Ba2NdFeNb4O15/Si(001) multiferroic thin films have been studied by X-ray diffraction analysis, scanning probe microscopy, and capacitance-voltage characteristics analysis. The RF cathode sputtering in an oxygen atmosphere was used for films fabrication. It has been found that the obtained Ba2NdFeNb4O15 films are single-phase, impurity-free, polycrystalline textured (c-oriented), and the out-of-plane strain is 0.8%, which leads to the presence of ferroelectric properties at room temperature. It is shown that the surface roughness of the films is ~ 15.39 nm, the lateral size of the crystallites is ~ 134 nm, and the relative permittivity in the temperature range of -190…150 °C is 95-130. The reasons for the revealed regularities are discussed.

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薄膜b- 2-= -2-= -4-= -O- 15-= =SUB -15-= =SUB -15-在氧气底座上生长的

采用x射线衍射分析、扫描探针显微镜和电容电压特性分析等方法研究了Ba2NdFeNb4O15/Si(001)多铁薄膜的相组成、纳米结构和性能。采用射频阴极在氧气环境下溅射制备薄膜。结果表明，制备的Ba2NdFeNb4O15薄膜为单相、无杂质、多晶织构(c取向)，面外应变为0.8%，在室温下具有铁电性能。结果表明:薄膜的表面粗糙度为~ 15.39 nm，晶体的横向尺寸为~ 134 nm，在-190 ~ 150℃温度范围内的相对介电常数为95 ~ 130。讨论了揭示规律的原因。

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Физика твердого тела

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