Field Emission Characteristics of Carbon Nanotube Films Fabricated by Different Methods

Linru Guo, X. Ye, H. Li, Yi-Tao Liu, Zhaoying Zhou
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Abstract

In order to improve the performance of field emitters nowadays, carbon nanotubes are used instead of conventional materials such as silicon and metals. In this paper, field emission characteristics of three different multi-wall carbon nanotube films have been compared, which are fabricated by different methods, including direct growth, evaporation coating and flow assembly. The field emission current-voltage property of each film has been characterized experimentally, and the electric field enhancement factor has been analyzed using Fowler-Nordheim theory. Moreover, emission stability of each film has been measured too. It can be concluded that the direct-grown vertical multi-wall carbon nanotube array has turn-on field of 0.603 V/mum and current density fluctuation less than 5%, which is much lower than the other films by post-treatment processes.
不同制备方法制备碳纳米管薄膜的场发射特性
为了提高场致发射体的性能,碳纳米管取代了硅和金属等传统材料。本文比较了直接生长、蒸发包覆和流动组装三种不同制备方法制备的多壁碳纳米管薄膜的场发射特性。实验表征了各膜的场发射电流-电压特性,并利用Fowler-Nordheim理论分析了电场增强因子。此外,还测量了各膜的发射稳定性。结果表明,直接生长的垂直多壁碳纳米管阵列的导通场为0.603 V/mum,电流密度波动小于5%,远低于后处理后的其他薄膜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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