A 24mW Chopped CTDSM Achieving 103.5dB SNDR and 107.5dB DR in a 250kHz Bandwidth

R. Theertham, Prasanth Koottala, Sujith Billa, S. Pavan
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引用次数: 7

Abstract

We present a CT$\Delta \Sigma$ M which uses a virtual-ground-switched resistor DAC to achieve low distortion by reducing the effects of inter-symbol interference (ISI), and parasitic resistance in the reference path. $1/ f$ noise is reduced by chopping the first stage of the input OTA. Chopping artifacts and clock jitter sensitivity are reduced by using a 3-stage OTA, and an 8-tap FIR feedback DAC. Fabricated in 180nm CMOS, the prototype modulator operates at 32MS/s and achieves 103.5/107.5dB SNDR/DR in a 250kHz bandwidth while consuming 24mW. The Schreier FoM is 173.7dB.
24mW斩波CTDSM在250kHz带宽下实现103.5dB SNDR和107.5dB DR
我们提出了一种CT $\Delta \Sigma$ M,它使用虚拟地开关电阻DAC通过减少符号间干扰(ISI)的影响来实现低失真,以及参考路径中的寄生电阻。$1/ f$通过斩除输入OTA的第一阶段来减少噪声。通过使用3级OTA和8分接FIR反馈DAC,减少了斩波伪影和时钟抖动灵敏度。该原型调制器采用180nm CMOS制造,工作速度为32MS/s,在250kHz带宽下实现103.5/107.5dB SNDR/DR,功耗为24mW。Schreier FoM为173.7dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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