Growth of Epitaxial Layers of the Si1-x-yGexSny Solid Solution from a Tin Solution-Melt

Abstract

Mono-crystal films of a graded-gap solid solution Si1-x-yGexSny on Si <111>substrates were grown by liquid-phase epitaxy from a limited tin solution-melt in the temperature range 500–1100 °C. The chemical composition of the grown epitaxial films was determined using a scanning electron microscope.