Mathematical modelling of kink effect in deep-submicron FDSOIMOSFET

Abstract

The kink effect has been observed in deep-submicron Fully Depleted Silicon-On-Insulator (FDSOI) MOSFETs and the corresponding devices have also been studied through physical modelling and simulation. The current work is an endeavour to put forward a mathematical model for the kink effect as observed in deep-submicron MOSFETs which is found to agree with the modelling and simulation results obtained by other researchers in the field.