{"title":"A 57–66 GHz reflection-type phase shifter with near-constant insertion loss","authors":"R. Ben Yishay, D. Elad","doi":"10.1109/MWSYM.2016.7540370","DOIUrl":null,"url":null,"abstract":"Integrated 60-GHz reflection-type phase shifter (RTPS) with near-constant insertion-loss for phased array transceivers is demonstrated in this paper. The RTPS is based on a cascaded couplers structure and implemented in a standard 0.12 μm SiGe BiCMOS process, using CMOS features only. The phase shifter is controlled by a 6-bit DAC and achieves >200° phase variation across the 57-66 GHz band with less than ±0.5 dB insertion loss variation over all phase states. The measured insertion loss at 60 GHz is 7.4 ± 0.25 dB. Measured RMS phase error is less than 2.6° and the RMS gain error is less than 0.3 dB over the 57-66 GHz range. The IC occupies area of 400 × 700 μm2 (0.28 mm2), excluding pads.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"20 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2016.7540370","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
Integrated 60-GHz reflection-type phase shifter (RTPS) with near-constant insertion-loss for phased array transceivers is demonstrated in this paper. The RTPS is based on a cascaded couplers structure and implemented in a standard 0.12 μm SiGe BiCMOS process, using CMOS features only. The phase shifter is controlled by a 6-bit DAC and achieves >200° phase variation across the 57-66 GHz band with less than ±0.5 dB insertion loss variation over all phase states. The measured insertion loss at 60 GHz is 7.4 ± 0.25 dB. Measured RMS phase error is less than 2.6° and the RMS gain error is less than 0.3 dB over the 57-66 GHz range. The IC occupies area of 400 × 700 μm2 (0.28 mm2), excluding pads.