X-ray photoelectron spectroscopy on amorphous CuxTe100−x and NixTe100−x

A.J. Brunner , P. Oelhafen, H.-J. Güntherodt
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引用次数: 1

Abstract

The electronic structure of amorphous and crystalline CuxTe100−x and NixTe100−x alloys was investigated by analysing the core levels measured using X-ray photoelectron spectroscopy. The binding energies of the core levels and their full width at half-maximum yield information on the atomic and electronic structure of the samples, and the asymmetry of the core levels correlates with the density of states of the elements at the Fermi level. Tellurium electron states seem to dominate the electronic properties of the CuTe samples. Three metal-to-semiconductor transitions were observed in CuxTe100−x around x = 45, and above and below x = 65. The last two transitions correspond to the electrical conductivity observed in melts. No transition was observed in NixTe100−x in the range 37 < x < 63 but we expect one for x below 37.

CuxTe100−x和NixTe100−x的x射线光电子能谱
利用x射线光电子能谱分析了CuxTe100−x和NixTe100−x合金的芯能级,研究了CuxTe100−x和NixTe100−x合金的非晶和结晶电子结构。核能级的结合能及其半最大时的全宽度可以提供样品的原子和电子结构信息,核能级的不对称性与元素在费米能级上的态密度有关。碲的电子态似乎主导了CuTe样品的电子性质。在CuxTe100−x中,在x = 45左右以及x = 65以上和以下观察到三个金属到半导体的转变。最后两个转变对应于熔体中观察到的电导率。NixTe100−x在37 <范围内未观察到跃迁;x & lt;63,但x低于37时,我们期望有一个。
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