Electron scattering anisotropy in silicon

Abstract

In n-Si single crystals, the scattering anisotropy of charge carriers has been studied depending on the compensation level of impurities. Theoretical calculations were carried out within the framework of the anisotropic scattering theory. The electrical conductivity, the Hall e(cid:27)ect, and the tensoresistance of silicon crystals with various di(cid:27)erence and summary concentrations of impurities were measured. It was established that an increase in the scattering anisotropy in n-Si crystals is practically independent of the degree of their compensation, but is associated only with an increase in the total concentration of ionized impurities. The intra-valley anisotropy of the scattering of charge carriers on dislocations as scatterers was studied for a (cid:28)xed location of the current with respect to the direction of their preferred orientation. Dislocations (having a distinguished orientation) were introduced into the n-Si crystal by the plastic bending deformation at 1073 K. It has been revealed that in n-Si crystals, the intra-valley anisotropy of the scattering on dislocations is much higher than the scattering anisotropy on the charged point defects. silicon, Hall e(cid:27)ect, tensoresistance, compensation degree, scattering anisotropy, dislocations.