Study on the Synthesis, Characterization of p-CuSCN/n-Si Heterojunction

The Open Materials Science Journal Pub Date : 2013-10-31 DOI:10.2174/1874088X01307010029

Xiongyu Chao, Chen Lei, H. Yuan

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引用次数: 4

Abstract

The p-CuSCN/n-Si heterojunction is fabricated by depositing CuSCN films on n-Si (111) films substrate using successive ionic layer adsorption and reaction (SULAR). CuSCN films show ￻ -phase structure by virtue of X-ray diffraction (XRD) spectroscopy. ZnO/CuSCN heterojunctions exhibit good diode characteristics and photovoltaic effects with illumination form its current-voltage (I-V) measurements. The linear relationship of 1/C 2 versus voltage curve implies that the built-in potential Vbi and the conduction band offset of the heterojunctions were found to be 2.1eV and 1.5eV, respectively. The forward conduction is determined by trap-assisted space charge limited current mechanism. At forward bias voltages, the electronic potential barrier is larger than holes in the p-CuSCN/n-Si heterojunction interface. In this voltage area, a single carrier injuction is induced and the main current of p-CuSCN/n-Si heterojunction is hole current. In addition, a band diagram of ZnO/CuSCN heterojunctions is also proposed to explain the transport mechanism. This heterojunction diode can be well used to light emission devices and photovoltaic devices.

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p-CuSCN/n-Si异质结的合成与表征研究

采用连续离子层吸附反应(SULAR)技术将CuSCN薄膜沉积在n-Si(111)薄膜衬底上，制备了p-CuSCN/n-Si异质结。通过x射线衍射(XRD)分析，CuSCN薄膜呈现￻-相结构。ZnO/CuSCN异质结表现出良好的二极管特性，并通过其电流-电压(I-V)测量显示出光照下的光伏效应。1/ c2与电压的线性关系表明，异质结的内置电位Vbi和导带偏置分别为2.1eV和1.5eV。正向导通是由陷阱辅助空间电荷限流机制决定的。在正向偏置电压下，p-CuSCN/n-Si异质结界面的电子势垒大于空穴。在该电压区，p-CuSCN/n-Si异质结产生了单载流子注入，主要电流为空穴电流。此外，还提出了ZnO/CuSCN异质结的能带图来解释传输机制。这种异质结二极管可以很好地用于发光器件和光伏器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Open Materials Science Journal

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