A 0.13µm 64Mb multi-layered conductive metal-oxide memory

Abstract

A number of technologies have been proposed to replace NAND Flash as scaling becomes more difficult [1–2]. One promising area includes resistive memories using the conductive metal oxide (CMOx™) technology where multiple memory layers can be stacked [3]. Earlier attempts have been made with non-rewritable materials [4]. The key concepts for a very high density, multi physical layer nonvolatile, rewritable memory have been developed on a 64Mb, 130 nm test chip.