Doping mechanisms and electrical properties of La-doped BaTiO3 ceramics

Finlay D Morrison, Derek C Sinclair, Anthony R West
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引用次数: 121

Abstract

The electrical properties of Ba1−xLaxTi1−x/4O3 ceramics where x≤0.20 were investigated by impedance spectroscopy after heat treatment in O2, Ar and air at 1350°C. Samples heated in O2 were electrically insulating with very high maximum permittivities, ∼25,000 at x=0.06 and exhibited significant ‘relaxor-type’ behaviour at x=0.10. Samples heated in Ar were semiconducting for all x whereas air heated samples were electrically inhomogeneous. Semiconductivity in these materials is attributed to oxygen loss as opposed to La-donor doping.

la掺杂BaTiO3陶瓷的掺杂机理及电学性能
采用阻抗谱法研究了x≤0.20的Ba1−xLaxTi1−x/4O3陶瓷在1350℃O2、Ar和空气中热处理后的电学性能。在O2中加热的样品具有非常高的最大介电常数,在x=0.06时为~ 25,000,并且在x=0.10时表现出显着的“松弛型”行为。在氩气中加热的样品对所有x都是半导体的,而空气加热的样品则是电不均匀的。这些材料的半导体性归因于氧损失,而不是la供体掺杂。
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