{"title":"Switchable 2-port Aluminum Nitride MEMS resonator using monolithically integrated 3.6 THz cut-off frequency phase-change switches","authors":"G. Hummel, M. Rinaldi","doi":"10.1109/FCS.2015.7138939","DOIUrl":null,"url":null,"abstract":"This work presents the first experimental demonstration of an intrinsically switchable Aluminum Nitride (AlN) 2-port MEMS resonator using 3 monolithically integrated chalcogenide phase change material (PCM) switches.","PeriodicalId":57667,"journal":{"name":"时间频率公报","volume":"12 1","pages":"706-708"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"时间频率公报","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.1109/FCS.2015.7138939","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This work presents the first experimental demonstration of an intrinsically switchable Aluminum Nitride (AlN) 2-port MEMS resonator using 3 monolithically integrated chalcogenide phase change material (PCM) switches.