Water-induced Combustion-processed Metal-oxide Synaptic Transistor

Abstract

In this study, we describe combustion-processed high-quality Li-AlOx thin films and their implementation in In-2O3 synaptic transistors by a low temperatures (300 °C) water-based method. The resulting synaptic transistors presented a superior electrical performance at a low operating voltage of 3 V, with a positive threshold voltage of 0.5 V, a subthreshold swing of 0.21 V/decade, an On/Off ratio of 1.5×10⁵, and a mobility value of 87 cm² V⁻¹ s⁻¹. Counterclockwise hysteresis was observed in the transfer curve and the synaptic transistor was employed to perform synaptic emulation. Long-term and short-term synaptic depression and potentiation behavior were emulated.