Boosting Q of <100> Aligned ALN-on-Silicon Laterally Vibrating Resonators by Wide Acoustic Bandgap Phononic Crystal Anchors

Renhua Yang, Jingui Qian, Joshua E.-Y. Lee
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引用次数: 1

Abstract

We demonstrate the boosting of quality factor (Q) of a <100> aligned Aluminum Nitride (AlN) on Silicon (Si) laterally vibrating resonator (LVR) by using wide acoustic bandgap (ABG) phononic crystal (PnC) anchors. To date, Q-boosting strategies have been studied predominantly for the common <110> orientation. Given the anisotropy of Si, changing orientation could notably affect the effectiveness of Q-boosting strategies. We show experimentally that Qs of <100> aligned LVRs more than doubled to 10000 with the PnC anchors. To further corroborate the effectiveness of the PnCs, we also incorporated the PnCs into delay lines with wave propagation along the <100> axis, showing that the PnCs provide large acoustic attenuation of 45 dB.
宽频带隙声子晶体锚定提高对准硅上氮化铝横向振动谐振器的Q值
我们证明了利用宽声波带隙(ABG)声子晶体(PnC)锚点提高硅(Si)横向振动谐振器(LVR)上排列的氮化铝(AlN)的品质因子(Q)。迄今为止,对q -boost策略的研究主要是为了共同取向。考虑到硅的各向异性,改变取向会显著影响增q策略的有效性。我们通过实验证明,使用PnC锚点,对齐lvr的Qs增加了一倍以上,达到10000。为了进一步证实pnc的有效性,我们还将pnc集成到波沿轴传播的延迟线中,结果表明pnc提供了45 dB的大声衰减。
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