First-Principles Langevin Molecular Dynamics Studies of Metallic and Semiconductor Clusters: GGA versus LDA Results

Abstract

The combination of Langevin molecular dynamics for simulated annealing with realistic quantum-mechanical interactions obtained from first principles supercell calculations within the pseudo potential plane-wave method are applied to examine the structural and electronic properties of the following systems i) pure and mixed GenTem (n, m = 0 - 2), Ge3, Te3 and Ge3Te3 semiconductor clusters, and ii) bimetallic PbNan (n ≤ 7) clusters. Results using the local density approximation (LDA) and the generalized gradient approximation (GGA) for the exchange correlation functional are compared with available experimental data. It is found that the GGA leads to larger bond lengths and smaller binding energies than the LDA, but both approximations lead to the same group symmetry for the ground state of these clusters. Two isomeric configurations for PbNa6, having C3v and Oh symmetries, respectively, are found. The dipole moments of semiconductor clusters are compared with those estimated from recent experiments at room temperature. The dipole moments from GGA calculations are, on average, in better agreement with experiments than those calculated with the LDA.