A Surface Potential and Drain Current Model for Tri-Gate FinFET: Analysis of Below 10nm Channel Length

Abstract

A drain current model based on Lambert W function is analyzed for lightly doped (undoped) short channel tri gate FinFET (TG-FinFET). The channel length modulation (CLM), the effect of series resistance, mobility degradation and saturation velocity are included in the drain current model. Quantum mechanical effect (QME) is also included to achieve precise drain current for such a small channel device. The model is inspected mainly for two fin widths with two dielectric materials namely, silicon dioxide (SiO2) and hafnium oxide (HfO2). A complete study of electrical parameters including surface potential and the threshold voltage are addressed for both the dielectric materials. The threshold voltage is cross-examined by reported experimental results.