The design of ground shield spiral inductor using 0.13 μm CMOS technology for millimeter-wave radio over fiber applications

Abstract

High quality factor, Q of inductor operates at high frequency and baseband is reported in this paper. These inductors are design for mm-wave RoF application that compatible with matured CMOS13 technology established by Silterra, Malaysia. In this paper, spiral inductor structure with metal 1 layers of ground shield is presented. Spiral inductor with multiple layers of ground shield using CMOS13 technology helps the IC designer boost up the performance of mm-wave circuit, like LNA, PA and Mixer. And it's compatibility in RoF system will extend the communication system to a higher level without worry the passive device resonance at higher frequency. The inductor surrounded by metal 1 ground shield structure is design to sustain its performance at higher frequency with low loss effect. The inductor performance was finally described through S-parameter measurement.