Phase change memory in enterprise storage systems: silver bullet or snake oil?

Hyojun Kim, S. Seshadri, Clem Dickey, Lawrence Chiu
{"title":"Phase change memory in enterprise storage systems: silver bullet or snake oil?","authors":"Hyojun Kim, S. Seshadri, Clem Dickey, Lawrence Chiu","doi":"10.1145/2626401.2626418","DOIUrl":null,"url":null,"abstract":"Storage devices based on Phase Change Memory (PCM) devices are beginning to generate considerable attention in both industry and academic communities. But whether the technology in its current state will be a commercially and technically viable alternative to entrenched technologies such as flash-based SSDs still remains unanswered. To address this it is important to consider PCM SSD devices not just from a device standpoint, but also from a holistic perspective.\n This paper presents the results of our performance measurement study of a recent all-PCM SSD prototype. The average latency for 4 KB random read is 6.7 ?s, which is about 16x faster than a comparable eMLC flash SSD. The distribution of I/O response times is also much narrower than the flash SSD for both reads and writes. Based on real-world workload traces, we model a hypothetical storage device which consists of flash, HDD, and PCM to identify the combinations of device types that offer the best performance within cost constraints. Our results show that - even at current price points - PCM storage devices show promise as a new component in multi-tiered enterprise storage systems.","PeriodicalId":7046,"journal":{"name":"ACM SIGOPS Oper. Syst. Rev.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACM SIGOPS Oper. Syst. Rev.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2626401.2626418","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

Storage devices based on Phase Change Memory (PCM) devices are beginning to generate considerable attention in both industry and academic communities. But whether the technology in its current state will be a commercially and technically viable alternative to entrenched technologies such as flash-based SSDs still remains unanswered. To address this it is important to consider PCM SSD devices not just from a device standpoint, but also from a holistic perspective. This paper presents the results of our performance measurement study of a recent all-PCM SSD prototype. The average latency for 4 KB random read is 6.7 ?s, which is about 16x faster than a comparable eMLC flash SSD. The distribution of I/O response times is also much narrower than the flash SSD for both reads and writes. Based on real-world workload traces, we model a hypothetical storage device which consists of flash, HDD, and PCM to identify the combinations of device types that offer the best performance within cost constraints. Our results show that - even at current price points - PCM storage devices show promise as a new component in multi-tiered enterprise storage systems.
企业存储系统中的相变存储器:银弹还是万金油?
基于相变存储器(PCM)器件的存储器件开始引起工业界和学术界的广泛关注。但目前状态下的这项技术能否在商业和技术上成为现有技术(如基于闪存的固态硬盘)的可行替代方案,仍然没有答案。为了解决这个问题,重要的是要考虑PCM SSD设备,不仅从设备的角度来看,而且从整体的角度来看。本文介绍了我们对最近的全pcm固态硬盘原型的性能测量研究结果。4kb随机读取的平均延迟为6.7 s,比同类eMLC闪存SSD快16倍。在读写方面,I/O响应时间的分布也比闪存SSD窄得多。基于真实的工作负载跟踪,我们对一个由闪存、HDD和PCM组成的假设存储设备进行建模,以确定在成本限制下提供最佳性能的设备类型组合。我们的研究结果表明,即使在当前的价格点上,PCM存储设备作为多层企业存储系统的新组件也很有希望。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信