Ultrapure chemical components for next generation materials

2017 China Semiconductor Technology International Conference (CSTIC) Pub Date : 2017-03-01 DOI:10.1109/CSTIC.2017.7919765

Hyun Yong Cho, Rameshwaram Sharma, Jeffrey D. Fogle

引用次数: 0

Abstract

Ultrapure chemical components for next generation materials for semiconductor manufacture are required due to chip yield enhancement. Some components for photoresist, cross linker, monomer, and photo acid generator (PAG) can be provided as representative ultrapure chemical components which have below 10 ppb level ionic metal impurities by particular purification methods.

查看原文本刊更多论文

用于新一代材料的超纯化学成分

由于芯片产量的提高，需要用于半导体制造的下一代材料的超纯化学元件。光敏胶、交联剂、单体和光酸发生器(PAG)的一些组分可以通过特定的纯化方法提供具有代表性的离子金属杂质低于10 ppb水平的超纯化学组分。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2017 China Semiconductor Technology International Conference (CSTIC)

自引率

0.00%

发文量