A temperature dependent SPICE macro-model for power MOSFETs

Abstract

A power MOSFET SPICE macro-model suitable for use over the temperature range -55 to 125 degrees C has been developed. The model is composed of a single parameter set with temperature dependence accessed through the SPICE.TEMP card. SPICE parameter extraction techniques for the model and model predictive accuracy are discussed. Though complex, the model and approach to parameter extraction are straightforward. As all the parameter extraction algorithms are analytic in nature, automation of the extraction process is straightforward and requires no special optimization routines. The addition of a power MOSFET model to the SPICE code would result in more robust and efficient simulations.<>