Surface Analysis of Chamber Coating Materials Exposed to CF4/O2 Plasma

S. Park, K. Kim, S. Hong
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引用次数: 9

Abstract

Coating the inner surfaces of high-powered plasma processing equipment has become crucial for reducing maintenance costs, process drift, and contaminants. The conventionally preferred alumina (Al2O3) coating has been replaced with yttria (Y2O3) due to the long-standing endurance achieved by fluorine-based etching; however, the continuous increase in radio frequency (RF) power necessitates the use of alternative coating materials to reduce process shift in a series of high-powered semiconductor manufacturing environments. In this study, we investigated the fluorine-based etching resistance of atmospheric pressure-sprayed alumina, yttria, yttrium aluminum garnet (YAG), and yttrium oxyfluoride (YOF). The prepared ceramic-coated samples were directly exposed to silicon oxide etching, and the surfaces of the plasma-exposed samples were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. We found that an ideal coating material must demonstrate high plasma-induced structure distortion by the fluorine atom from the radical. For endurance to fluorine-based plasma exposure, the bonding structure with fluoride was shown to be more effective than oxide-based ceramics. Thus, fluoride-based ceramic materials can be promising candidates for chamber coating materials.
暴露于CF4/O2等离子体的腔室涂层材料表面分析
高功率等离子体处理设备的内表面涂层对于降低维护成本、工艺漂移和污染物至关重要。传统上首选的氧化铝(Al2O3)涂层已被钇(Y2O3)所取代,因为氟基蚀刻实现了长期的耐久性;然而,射频(RF)功率的不断增加需要使用替代涂层材料来减少一系列高功率半导体制造环境中的工艺转移。在本研究中,我们研究了常压喷涂氧化铝、钇、钇铝石榴石(YAG)和氧化氟化钇(YOF)的耐氟腐蚀性能。将制备的陶瓷涂层样品直接暴露于氧化硅蚀刻下,并利用扫描电镜、能量色散x射线能谱和x射线光电子能谱对等离子体暴露样品的表面进行了表征。我们发现理想的涂层材料必须表现出由自由基中的氟原子引起的高等离子体诱导结构畸变。对于氟基等离子体暴露的耐久性,与氟的键合结构被证明比氧化物基陶瓷更有效。因此,氟基陶瓷材料可以作为腔室涂层材料的有希望的候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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