A DLTS technique for surface state capture cross-section measurement of MOS diodes

Dipankar Sengupta, M.Mohan Chandra, Vikram Kumar
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引用次数: 1

Abstract

A modified DLTS technique is proposed for the direct measurement of capture cross-section of MOS surface states. The nature of temperature and energy dependence σn is inferred from data analysis. Temperature dependence of σn is shown to be consistent with the observed DLTS line shapes.

用于MOS二极管表面态捕获截面测量的DLTS技术
提出了一种改进的DLTS技术,用于直接测量MOS表面态的俘获截面。从数据分析中推断出温度和能量依赖的性质σn。σn的温度依赖性与观测到的DLTS线形一致。
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