SiGe based Ka-band reflection type phase shifter for integrated phased array transceivers

N. Mazor, O. Katz, R. Ben-Yishay, D. Liu, A. V. Garcia, D. Elad
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引用次数: 12

Abstract

Phase shifters are key components in phased array systems. A low loss and low loss variations SiGe differential phase shifter for the Ka-band is described. This bidirectional differential reflection type phase shifter (RTPS) design employs a novel diagonal configuration for the coupler and it is controlled by a single voltage node. The measured results show state of the art insertion loss of 5±1 dB, phase tuning range larger than 180 degrees, for a frequency range of 26.5 GHz to 32.8 GHz (21%). At 30 GHz, the phase shifter exhibits insertion loss of 4.8 dB, loss variation of ±0.4 dB, and more than 206 degrees of phase shift range. The RTPS was fabricated in a standard BiCMOS SiGe process and occupies 0.64 mm2 die area.
集成相控阵收发器用SiGe ka波段反射式移相器
移相器是相控阵系统的关键部件。描述了一种用于ka波段的低损耗和低损耗变化SiGe差分移相器。这种双向差分反射型移相器(RTPS)设计采用了一种新颖的对角线配置的耦合器,它是由一个单一的电压节点控制。测量结果表明,目前最先进的插入损耗为5±1 dB,相位调谐范围大于180度,频率范围为26.5 GHz至32.8 GHz(21%)。在30 GHz时,移相器的插入损耗为4.8 dB,损耗变化为±0.4 dB,相移范围大于206度。RTPS采用标准BiCMOS SiGe工艺制作,模具面积为0.64 mm2。
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