Low power FPGA design using post-silicon device aging (abstract only)

Sheng Wei, J. Zheng, M. Potkonjak
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引用次数: 7

Abstract

The impact of process variation (PV) in deep submicron CMOS technologies has raised major concerns for energy optimization efforts in FPGAs. We have developed a post-silicon leakage energy optimization scheme that raises the threshold voltage (by way of negative bias temperature instability (NBTI) aging) of the components that are either unused or not on the critical timing paths, thereby reducing the total leakage energy consumption. In order to obtain the input vectors for aging only the targeted transistors, we map the problem of minimizing leakage energy under timing constraints to an instance of the satisfiability (SAT) problem. We implemented low power designs targeting Xilinx Spartan6 FPGAs and analyzed the potential leakage power savings over a set of ITC99 and Opencores benchmarks. The analysis of the experimental results shows a substantial amount of potential leakage energy reduction with very small performance degradation.
基于后硅器件老化的低功耗FPGA设计(仅摘要)
在深亚微米CMOS技术中,工艺变化(PV)的影响引起了对fpga能量优化工作的主要关注。我们开发了一种后硅泄漏能量优化方案,该方案通过提高未使用或不在关键时序路径上的组件的阈值电压(通过负偏置温度不稳定性(NBTI)老化),从而降低总泄漏能量消耗。为了获得仅老化目标晶体管的输入向量,我们将时序约束下的泄漏能量最小化问题映射为可满足性问题的一个实例。我们实现了针对Xilinx Spartan6 fpga的低功耗设计,并在一组ITC99和Opencores基准测试中分析了潜在的泄漏功耗节约。对实验结果的分析表明,在性能下降很小的情况下,潜在泄漏能量大幅降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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