Continuous-wave terahertz photomixing in low-temperature InGaAs

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004. Pub Date : 2004-12-01 DOI:10.1109/ICIMW.2004.1422114

C. Baker, I. Gregory, W. Tribe, M. Evans, M. Missous, E. Linfield

引用次数: 4

Abstract

Highly-resistive low-temperature grown InGaAs, with a sub-500 fs carrier lifetime, is used as an all-optoelectronic continuous-wave terahertz photomixer system based on diode lasers. Interdigitated electrodes fabricated on epitaxial low-temperature grown In/sub 0.3/Ga/sub 0.7/As are used as photomixers to generate and detect radiation from microwave frequencies (<100 GHz) to beyond 1.0 THz.

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低温InGaAs中连续波太赫兹光混合

高阻低温生长InGaAs，载流子寿命低于500fs，被用作基于二极管激光器的全光电连续太赫兹光电混合系统。在外延低温生长In/sub 0.3/Ga/sub 0.7/As上制备的交叉指状电极作为光电合成电极，用于产生和探测微波频率(<100 GHz)至1.0 THz以上的辐射。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.

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