G. Courtois, R. Kurstjens, Jinyoun Cho, K. Dessein, I. García, I. Rey‐Stolle, C. Algora, V. Depauw, C. Porret, R. Loo
{"title":"Development of germanium-on-germanium engineered substrates for III-V multijunction solar cells","authors":"G. Courtois, R. Kurstjens, Jinyoun Cho, K. Dessein, I. García, I. Rey‐Stolle, C. Algora, V. Depauw, C. Porret, R. Loo","doi":"10.1109/PVSC45281.2020.9300462","DOIUrl":null,"url":null,"abstract":"Specific power is an important metric for solar arrays in the aerospace market. For High Altitude Pseudo Satellites (HAPS), solar cells specific powers above 1500 W/kg are targeted. The current standard technology for space applications, namely lattice matched triple junction solar cells grown on $145\\ \\mu\\mathrm{m}$ thick germanium substrates, supplies the required efficiency but is not light enough. This paper will present the Ge-on-Ge engineered substrate concept as an approach that can be implemented to address the needed reduction in germanium substrate thickness. The lift-off of the top Ge foil from this Ge-on-Ge substrate will be demonstrated. Additionally, results of epitaxial growth of III-V layers onto Ge-on-Ge engineered substrates will be discussed.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"58 1","pages":"1053-1055"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC45281.2020.9300462","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Specific power is an important metric for solar arrays in the aerospace market. For High Altitude Pseudo Satellites (HAPS), solar cells specific powers above 1500 W/kg are targeted. The current standard technology for space applications, namely lattice matched triple junction solar cells grown on $145\ \mu\mathrm{m}$ thick germanium substrates, supplies the required efficiency but is not light enough. This paper will present the Ge-on-Ge engineered substrate concept as an approach that can be implemented to address the needed reduction in germanium substrate thickness. The lift-off of the top Ge foil from this Ge-on-Ge substrate will be demonstrated. Additionally, results of epitaxial growth of III-V layers onto Ge-on-Ge engineered substrates will be discussed.