Composition control of SBN thin films deposited by PLD on various substrates

International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI:10.1016/S1466-6049(01)00140-4

J.R Duclère , M Guilloux-Viry , A Perrin , C Clerc , F Lalu , J Lesueur , S.M Zanetti , V Bouquet , E Longo

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引用次数: 16

Abstract

Thin films of SrBi₂Nb₂O₉ (SBN) have been grown on both Pt/Ti/SiO₂/Si and (100)MgO substrates by pulsed laser deposition. In the Sr–Bi–Nb–O system, the loss of bismuth during the process due to its volatility results obviously in a non-respect of the stoichiometry of the films and the presence of secondary phases. In order to maintain the right composition of the films, two different ways were experimented. On Pt/Ti/SiO₂/Si, a sequential deposition from home-made Bi₂O₃ and SBN sintered targets as well as the use of Bi-enriched targets allows to obtain stoichiometric ferroelectric films. Various parameters like deposition time and periodicity of the Bi₂O₃ and SBN layers are of first importance. On (100)MgO which promotes SBN epitaxial growth, this sequential deposition is not suitable and we succeeded in the control of the Bi/(Sr+Nb) ratio only by using Bi-enriched targets.

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PLD在不同衬底上沉积SBN薄膜的成分控制

采用脉冲激光沉积技术在Pt/Ti/SiO2/Si和(100)MgO衬底上生长了SrBi2Nb2O9 (SBN)薄膜。在Sr-Bi-Nb-O体系中，由于其挥发性，铋在反应过程中的损失明显影响了膜的化学计量和二次相的存在。为了保持电影的正确构图，我们尝试了两种不同的方法。在Pt/Ti/SiO2/Si上，自制Bi2O3和SBN烧结靶材的顺序沉积以及富bi靶材的使用可以获得化学计量铁电薄膜。Bi2O3和SBN层的沉积时间和周期等参数是最重要的。在促进SBN外延生长的(100)MgO上，这种顺序沉积不适合，我们仅通过使用Bi富集靶成功地控制了Bi/(Sr+Nb)比。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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International Journal of Inorganic Materials

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