The Doping of Alkali Metal for Halide Perovskites

Jintian Jiang, Jing Xu, Huddoy Walter, A. Kazi, Daoyuan Wang, G. Wangila, M. Mortazavi, Chao Yan, Qinglong Jiang, Pine Bluff Arkansas Usa Physics
{"title":"The Doping of Alkali Metal for Halide Perovskites","authors":"Jintian Jiang, Jing Xu, Huddoy Walter, A. Kazi, Daoyuan Wang, G. Wangila, M. Mortazavi, Chao Yan, Qinglong Jiang, Pine Bluff Arkansas Usa Physics","doi":"10.30919/esmm5f705","DOIUrl":null,"url":null,"abstract":"DOI: 10.30919/esmm5f705 Doping, introducing impurities in the materials, plays a critical role for junction formation in semiconductor. It directs the flow of charge carriers and improves their transport properties in the thin-film electronic devices including halide perovskite materials based optical-electric devices. Dopants can strongly modify electronic, optical and other properties of materials. Due to the relative smaller size,alkali metals play an important role for halide perovskite materials. In this review, recent research work on the doping of halide perovskite materials byalkali metals, especially the electrochemical doping, have been studied from the view of chemistry and physics.","PeriodicalId":11851,"journal":{"name":"ES Materials & Manufacturing","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ES Materials & Manufacturing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.30919/esmm5f705","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

DOI: 10.30919/esmm5f705 Doping, introducing impurities in the materials, plays a critical role for junction formation in semiconductor. It directs the flow of charge carriers and improves their transport properties in the thin-film electronic devices including halide perovskite materials based optical-electric devices. Dopants can strongly modify electronic, optical and other properties of materials. Due to the relative smaller size,alkali metals play an important role for halide perovskite materials. In this review, recent research work on the doping of halide perovskite materials byalkali metals, especially the electrochemical doping, have been studied from the view of chemistry and physics.
卤化钙钛矿中碱金属的掺杂
掺杂,在材料中引入杂质,在半导体结形成中起着至关重要的作用。它在包括卤化物钙钛矿材料的光电器件在内的薄膜电子器件中指导载流子的流动并改善其输运特性。掺杂剂可以强烈地改变材料的电子、光学和其他性质。由于相对较小的尺寸,碱金属在卤化钙钛矿材料中起着重要的作用。本文从化学和物理的角度综述了近年来碱金属掺杂卤化钙钛矿材料的研究进展,特别是电化学掺杂。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信